4软化学法制备氧化亚铜及光催化性分析论文.doc

摘　要 氧化亚铜(Cu2O)具有优越的光电性质，是一种具有广泛用途的材料，而且它的制备方法很多。本论文采用化学浴沉积法制备了纳米Cu2O 薄膜, 采用X射线衍射(XRD)来测试薄膜的晶体结构；扫描电子显微镜观察薄膜表面形貌；紫外分光光度计测试薄膜的光学性质，研究了化学浴沉积工艺参数如溶液配比、pH值、溶液浓度、沉积温度、沉积时间等对薄膜的影响规律，探索了最佳成膜条件。结果表明: 化学浴沉积法有利于制备高质量的纳米Cu2O薄膜; 最佳反应温度为70～80℃,此温度范围内Cu2O 薄膜的膜厚在一定范围内随着沉积时间线性增加, 制备的薄膜纯度较高, 表面较平整和致密, Cu2O 粒径为14～22 nm , 其禁带宽度为2.01 eV. 关键词: 纳米氧化亚铜; 薄膜；化学浴沉积法; 光催化性 Abstract Cu2O is one of the widest used materials depending on its excellent photoelectric properties. Cu2O films with nano-sized crystalline were prepared by chemical bath deposition and characterized with XRD and TEM, in order to explore the best film-forming conditions; Through characterized to ensure the crystal structure by X-ray diffraction (XRD), observe morphology by scanning electron microscope (SEM), and study optical properties by UV-Vis spectrophotometer. The effects on the thin films of experimental parameters including duration time, solution ratio, pH value of deposition solution, bath temperature, pre-treatment of substrate etc. have been investigated in detail during the deposition processing. The results showed that chemical bath deposition method is conductive to the improved preparation of high-quality thin films of nano-Cu2O; the reaction temperature is 70～80 ℃, thickness of Cu2O film increases linearly with the deposition time, the films obtained a perfect purity, and the smooth surface and dense, Cu2O has a particle size of 14～22 nm, the band gap is 2.01 eV. [Key words]: Nano-Cu2O; thin film; Chemical Bath Deposition. 目录 TOC \o 1-3 \h \z \u HYPERLINK \l _Toc295426304 摘　要 PAGEREF _Toc295426304 \h 1 HYPERLINK \l _Toc295426305 Abstract PAGEREF _Toc295426305 \h 2 HYPERLINK \l _Toc295426306 目录 PAGEREF _Toc295426306 \h 3 HYPERLINK \l _Toc295426307 第一章 绪 论 PAGEREF _Toc295426307 \h 6 HYPERLINK \l _Toc295426308 1.1课题背景及意义 PAGEREF _Toc295426308 \h 6 HYPERLINK \l _Toc295426309 1.2 Cu2O薄膜的国内外研究现状 PAGEREF _Toc295426309 \h 7 HYPERLINK \l _Toc295426310 1.2.1 Cu2O薄膜的制备方法 PAGEREF _Toc295426310 \h 7