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EffectsofRudiffusioninexchange-biasedMgOmagnetictunneljunctionspreparedbysituannealing(APL)文献.pdf

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APPLIED PHYSICS LETTERS 95, 222501 2009 Effects of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by in situ annealing Il-Jae Shin,1,2 Byoung-Chul Min,1,a Jin Pyo Hong,2 and Kyung-Ho Shin1 1 Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea 2 Department of Physics, Novel Functional Materials and Devices Lab, Hanyang University, Seoul 133-791, Republic of Korea Received 30 September 2009; accepted 4 November 2009; published online 1 December 2009 We study the effect of Ru diffusion in exchange-biased MgO magnetic tunnel junctions prepared by high-temperature in situ annealing above 400 °C, circumventing Mn diffusion conventionally caused by postannealing process. The high temperature in situ annealing leads to Ru diffusion at the CoFeB/Ru interfaces, and thereby results in a reduction in tunnel magnetoresistance TMR. The minimization of Ru diffusion during the in situ annealing provides a large TMR of 294% at room temperature with an exchange-bias ﬁeld of 280 Oe. In addition, the temperature and voltage dependence of TMR reveals that there is neither signiﬁcant spin-exchange scattering nor severe impurity-assisted scattering in the MgO barrier. © 2009 American Institute of Physics. doi: 10.1063/1.3268791 The achievement of large magnetoresistance in MgO- and MgO barrier. Because the high-temperature annealing based magnetic tunnel junctions MTJs, consisting of two with CoFeB/MgO/CoFeB is conducted before the IrMn layer ferromagnetic electrodes separated by a thin MgO tunnel is deposited, the diffusion