太阳能电池特性分析.ppt

Conclusions (1) Precision I-V measurements of cell parameters help to inform and improve upon development processes Accurate understanding of sources of error can lead to more efficient cell production Cell tests can be done quickly and easily with a single instrument solution Conclusions (2) Doping density, defect density, and resistivity can inform mobility and other fundamental material properties Difficult I-V/C-V measurements of properties of the semiconductor material and doping technologies can be made simple with the proper measurement system Conclusions (3) Make certain your selected instruments can handle the power envelope of your devices. Keithley offers different series of SMUs for different voltage, current, power, and accuracy levels. * 31 Reference Material Keithley References Resistivity for solar cells application note Hall Effect Measurements Fundamentals online seminar (/events/semconfs/webseminars) DLCP for solar cells application note Making I-V and C-V Measurements on Solar Cells Using the 4200-SCS (#2876) Measuring Photovoltaic Cell I-V Characteristics with the Model 2420 (#1953) Keithley Low Level Measurement Handbook (/wb/201) Other References PVCDROM website (/pvcdrom) An excellent starting point for understanding solar cells. The QE figures were reused from this website. DLCP Paper Heath, J. T.; Cohen, J. D.; Shafarman, W. N., Bulk and metastable defects in CuIn1-xGaxSe2 thin films using drive-level capacitance profiling. Journal of Applied Physics 2004, 95, (3), 1000. Semiconductor Material and device Characteristics Textbook Schroder, Deiter K. Semiconductor material and device characterization, 2nd edition, 1998 Wikipedia solar cell article We reused some of the figures from this entry to explain the effects of Rs, Rsh, and T on cell efficiency. This article is a very good start for understanding solar cell operation. 32 Q A Thanks for participating in today’s seminar For more information about electrical characterization of sol