射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜.pdfVIP

31 5 570 CHINESE JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY 2011 910 N p * 林 龙 李斌斌 鲁林峰 沈鸿烈 刘 斌 ( 210016) Growth and Characterization of NDoped pType Cu O Films by RF 2 Reactive Magnetron puttering * Lin Long,Li Binbin , Lu Linfeng, Shen Honglie, Liu Bin ( College of Material Science and Technology , Nanj ing University of A eronaut ics and Astronaut ics , Nanj ing 210016, China) Abstract The Ndoped, ptype Cu O film were depo ited by rf reactive magnetron puttering on gla ub trate . 2 The impact of the growth condition , including the Ndoping level , ratio of the N2/ O2 flow rate , and puttering power, on it propertie were tudied. It micro tructure and propertie were characterized with Xray diffraction, Xray photoelec tron pectro copy ( XPS) , ultraviolet vi ible light ( UVVi ) pectro copy, and Halleffect mea urement .The re ult how that the N impurity content and the ratio of the N / O flow rate trongly affect it micro tructure and propertie . For in 2 2 tance, a the Ndoping level increa e , it cry talline tructure deteriorate , wherea it optical band gap widen from about 228 eV to 247 eV.Moreover, it electrical propertie tend to be more table. At a N / O ratio of 06, it re i tivi 2 2