C_SiC与TC4钛合金异质连接过渡层的研究.pdf

VACUUM ELECTRONICS C/ SiC TC4 陆艳杰, 张小勇, 楚建新, 李新成 ( , 100088) Studies on Transition Layer for Brazing C/ SiC to TC4 TiAlloy LU Yanjie, ZHANG Xiaoyong, CHU Jianxin, LI Xincheng ( Gener al R esear ch I nst it ute of N onFer r ous Metals , B e ij ing 100088, China) Abstract:By sing A95 Walloy , A80 Walloy , C103 Nballoy and the joining of these alloys as transi tion material to relieve thermal stress, the joint of C/ SiC and T C4 Tialloy w ere acq ired. The interfacial microstr ct re and element distrib tion w ere investigated by SEM, EDS and XRD methods. T he airtight ness and tensilestrength of the joint of C/ SiC and T C4 Tialloy w ere tested. Experimental res lts show that there are TiCtype, TiSitype, C 4 Titype and C 3T itype phases distrib ting in the metall rgical in terface generated by the active brazing of C/ SiC and A95, A80 Walloy. How ever a strong joint w ith high airtightness of T C4 w as acq ired by sing the transition layer of the joining of A95 Walloy , A80 Walloy, C103 Nballoy beca se of metall rgical interface and the expansion coefficient changing in gradient thro gh the w hole joint. Key words: C/ SiC, T C4 T ialloy , Brazing, Transition layer, A95 Walloy : A95 A 80 C103 C/ SiC T C4 , X C/ SiC , , A95, A80 , C/ SiC , T iC, TiSi, C Ti 4 C Ti ; , , C/ SiC T C4 3 ( 6221 MPa) , : C/ SiC; T C4 ; ; ; A95 :TB756 :A : 002- 8935( 20 0)04- 0030- 04 [ 3- 5] C/ SiC ( 175~ 3 210 g/ cm ) , C/ SiC 1000~ 1300 , C/ SiC , 1650 , , C/ SiC