300mm硅片双面抛光过程数学模拟及分析.pdfVIP

38 3 Vo l38, N o. 3 2008 6 Micr oelectr onics Jun2008 300 mm 库黎明, 闫志瑞, 索思卓, 常 青, 周旗钢 ( , 100088) : 建立了双面抛光过程中硅片表面上的一点 对于抛光布的运动模型; 利用数学软件, 模 拟出不同速度下的运动轨迹轨迹和实验结果表明, 在其他双面抛光工艺不变的情况下, 改变抛光 机四个部分的转速, 对硅片表面的平整度有很大的影响, 特别是边缘部分的局部平整度优化四个 转速, 可以显著改善300 mm 硅片表面的平整度和局部平整度 : 300 mm 硅片; 双面抛光; 数学模拟; 轨迹; 平整度 + : T N304 . 1 2 : A : 1004- 3365( 2008) 03- 0373- 04 Mathematical Modeling and Analysis of Double-sidedPolishing Process for 300 mm Silicon Wafers KU Liming, YA N Z hi ui, SU O Sizhuo, CH A NG Qing, ZH OU Qigang (General Research Institutef or N onf errous Metals, GRIN M Semiconductor Mater ials Co. , Ltd. , Beij ing 100080, P. R. China) Abstract: A motion model based on the analysis of mathematica l modeling was established t o study mo tio n path in do uble- sided polishing p ocess fo 300 mm silicon w afe s. Results showed that otation speeds had significant im- pact on the g eomet y, especially o n the site flat ness ( SFQ R) . T he findings a e helpful in optimizing pa amete s fo double- sided polishing of 300 mm silicon wafe s. Key words: 300 mm silicon w afe ; Double- sided polishing ; M at hematical modeling ; P ath cu v e; F latness EEA : 2520; 2530 1 引 言 , [ 2] , , , , , , [ 3, 4] , , 150 m m 200 mm 300 mm [ 1] ; , , ;