BSIM模型的研究和最近进展.pdf

第27卷第3期 半导体学报 V0127 No．3 CHINESE OF 2006年3月 JOURNALSEMICONDUCTORS Mar，2006 BSIMModelResearchandRecent Progress” He Jinl，3一。ChanMansun2w．XiXuemei3，WanHui3， Pinsul，Ali andHu Niknejadl， Chenmin93 (1InstituteofMicroelecironics，Peking100871，China) University．Belting (2DepartmentofElectrical＆ElectronicEngineeringt KoⅫ，China) 94720，USA) ofCal柏rnia．Berkeley．CA continued Abstraet：The ofCMOS andthe ofnew demandcon． developmenttechnologyemergenceapplications tinued andenhancementof modek．ThisoutHnestherecentworkoftheBSIM improvement compact paper project atthe of BSIM5 research，BSIM4enhancements，andBStMSOI UniversityCallfornia，Berkeley，including develop． merit．BSIM5addressestheneedsof andRF circuit nano-CMOStechnologyhigh-speedCMoS amatureindustrialstandardMOSFETmodelwithseveral tomeetthe improvements technologyrequirements BSIMSOIis intoa modelframeworkforPDandFDSoI mode developedgeneric technology．Anoperation choice，viathecalculationofthe and circuit inthetrend bodypotential△VKbodycurrent／charge，helpsdesigners ofthecoexistenceofPDandFDdevices device Keywords}compactmodefin