PDP放电单元Si掺杂MgO保护层二次电子发射系数理论研究.pdf

第30卷第5期 真空科学与技术学报 2010年9、10月 CHINESEJOURNALOFVACUUMSCIENCEANDTEC删OLoGY 535 PDP放电单元Si掺杂MgO保护层二次 电子发射系数理论研究 李巧芬屠彦。 杨兰兰王保平 (东南大学电子科学与工程学院显示中心南京210096) ElectronEmission Calculationof Coefficientof MgO Secondary Si-I)opea ProtectiveforPlasma Panel Layer Display LiQiaofen，TuYah。，YangLanlan，WangBaoping Sc／ence E／ectwrdc 210096，Ch／na) (眈密切脚Center，Schoolof and西硒，咖，Southeast‰妙，Nanj／rig of was intermsofthe AbstractTheelectronicstructurethe system evaluated first Mgt—xSi。O theoretically princi— on functional theelectronic calculation，based structure，bandstructure，demi· ple density theory．Keyvariables，including states ofstatesofthe O calculatedwiththecodeof initiativefor t)，of density Mgl一，Sixcrystal，were Spanish and耻lnial of of of electronicsimulatiomwiththousands Ontheelectronic the atoms(SIESTA)．The Mso impactSi—doping properties and electronemissionfortheNeandXeionsofthe 0inthe cell， layer secondary yield Mgl一#Siz plasmadisplaypanel of results of filledwithamixtureNeandXe studied．Thecalclllatedshowthat of$IIIBllamountSi(髫 gases，was doping