制备工艺条件对HfO2薄膜结构和性能的影响.pdf

第28卷第2期 真空科学与技术学报 2008年3、4月 C卸咐ESEJOURNALOFVAcI兀肭SCIENCEANDTEC唧OU)GY 159 制备工艺条件对Hf02薄膜结构和性能的影响 刘 伟’ 苏小平 张树玉郝鹏王宏斌刘嘉禾 (北京国晶辉红外光学科技有限公司北京有色金属研究总院北京100088) GrowthandCharacterizationof ThinFilms lif02 Liu andLiu Wei’，Su Jiahe Xiaop吨，ZhangShuyu，l-IaoPeng，WangHonghin (蜥cuo／／ngInflated唰Techno／ogyCo．，／_zd，蛾Genera／ 100058，Ch／na) Research饥*讹加NonferrousMeta／s，g日／j／ng thinfilmswere electron assisted 朋删Hf02 grownby beam(EB)evaporation，ion five substrates．rlhemicrostmcturesand ofthe thinfilms magnetron quartz physicalpropertiesSf02 sputtering(MS)Oil werecharacterizedwith electron uhmvioletvisible X—my抛tion(XRD)，scanning lightspec- microscopy(SEM)and someconventional showthatthe affect troscopy(UV—Vis)andprobes．Thep陀hIIlinar)，resultsgowthtechniquesstrongly themicrostmcturesand ofthe thinfilms．For EBfilmwasfoundtobe propertiesHf02 example，the IAD films MS the andMSfilmsare reactive polycrystalline．Thegrownby magnetronsputtering(or ahigh- films)，display ersurfac沱hardnea,强anda optical thanthoseoftheEBandIADfilms．The mechanisms砖一 stronger absorption possible forthemicrostmcturesobservedwerealso discussed． spensible tentatively thin