四(8-羟基喹啉)硼锂作为电子注入层的高效有机发光二极管.pdf

理化学学报(Wuli Huaxue Xuebao) April Acta Phys. Chim. Sin., 2007, 23(4) ：455-458 455 [Communication] (8 羟基喹啉)硼锂作为电子注入层的高效有机发光二极管 锐 李 杨 段 炼 德强 邱 勇 (清华大学化学系, 有机光电子与分子工程教育部重点实验室, 北京 100084) 摘要： 采用四(8 羟基喹啉)硼锂(LiBq )代替LiF 作为电子注入材料, 以金属铝作为阴极, 制备了有机电致发光 4 器件. 器件采用N,N 忆 ( 萘基) N,N 忆 苯基联苯二胺(NPB)作为空穴传输层, 三(8 羟基喹啉)铝(Alq )作为电子传输 3 层和发光层. 采用LiBq 作为电子注入层, 实验结果表明, 器件的亮度、电流效率和起亮电压等性能 有改善, 超 4 过了采用LiF 作为电子注入层的器件. 器件性能的提升可以用电子注入增强和电荷平衡来解释. 关键词：四(8 羟基喹啉)硼锂; 电子注入; 有机发光二极管 中图分类号： O644 Efficient Organic Light emitting Diode Using Lithium Tetra (8 hydroxy quinolinato) Boron as the Electron Injection Layer ZHANG Rui LI Yang DUAN Lian ZHANG De Qiang QIU Yong (Key Laboratory of Organic Op toelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, P. R. China) Abstract ： High performance organic light emitting diodes (OLEDs) with lithium tetra (8 hydroxy quinolinato) boron (LiBq ), instead of LiF, as the electron inj ection layer, and aluminum as the cathode were fabricated. In the fabrication 4 of the devices, N,N 忆 bis (1 naphthyl) N,N 忆 diphenyl 1,1忆 biphenyl 4,4忆 diamine (NPB) was used as the h