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Analysis of microstrip resonators of arbitrary shape
112 IEEE TRANSACTIONS ON MICROWAVE THEORY A N D TECHNIQUES, VOL 40. NO I . JANUARY 1992
Analysis of Microstrip Resonators of Arbitrary Shape
Krzysztof A. Michalski, Senior Member, IEEE, and Dalian Zheng, Member, IEEE
Abstract-A space-domain approach based on a mixed-poten- though the rectangular-mesh model has successfully been
tial integral equation formulation is developed for efficient used to analyze planar microstrip structures of various
computation of complex resonant frequencies of laterally open
shapes [ 111-[13], a triangular-element model is applica-
microstrip-patch resonators of arbitrary shape. The effects of
the substrate-which may consist of any number of planar, ble to a still wider class of geometries. This has recently
possibly uniaxially anisotropic, dielectric layers-are rigor- been recognized by several authors [14]-[ 161, who em-
ously incorporated in the formulation by means of the vector ployed the MPIE formulation in conjunction with the vec-
and scalar potential Green’s functions. The current distribu- tor basis functions defined over a triangular support [ 171.
tion on the conducting patch is approximated in terms of vector
In this paper, we adopt the latter approach to study lat-
basis functions defined over triangular elements. Computed
resonant frequencies, quality factors, modal currents, and far- erally open microstrip resonators of planar, but otherwise
field radiation patterns are presented for sev
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