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Analysis of the excitonexciton interaction in semiconductor quantum wells
Analysis of the exciton-exciton interaction in semiconductor quantum wells
Christoph Schindler∗ and Roland Zimmermann
Humboldt-Universit¨at zu Berlin, Institut f¨ur Physik
Newtonstraße 15, 12489 Berlin, Germany
The exciton-exciton interaction is investigated for quasi- two-dimensional quantum structures.
A bosonization scheme is applied including the full spin structure. For generating the effective
interaction potentials, the Hartree-Fock and Heitler-London approaches are improved by a full two-
exciton calculation which includes the van der Waals effect. With these potentials the biexciton
8 formation in bilayer systems is investigated. For coupled quantum wells the two-body scattering
0 matrix is calculated and employed to give a modified relation between exciton density and blueshift.
0 Such a relation is of central importance for gauging exciton densities in experiments which pave the
2 way toward Bose-Einstein condensation of excitons.
l
u
J PACS numbers: 73.20.Mf, 71.35.Gg, 78.67.De
3
2 I. INTRODUCTION field in growth direction forces electrons and holes to re-
] side in adjacent quantum wells which are separated by a
l barrier. Due to this spatial separation, the indirect exci-
l Excitons (bound pairs of electron and hole) play a tons exhibit extremely long
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