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Effect of strain on surface diffusion in semiconductor heteroepitaxy
Effect of strain on surface diffusion in semiconductor heteroepitaxy
Evgeni Penev, Peter Kratzer, and Matthias Scheffler
Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195 Berlin-Dahlem, Germany
(Submitted 25 January 2001)
1 We present a first-principles analysis of the strain renormalization of the cation diffusivity on the
0 GaAs(001) surface. For the example of In/GaAs(001)-c(4 × 4) it is shown that the binding of In is
0 increased when the substrate lattice is expanded. The diffusion barrier ∆E (ε) has a non-monotonic
2 strain dependence with a maximum at compressive strain values (ε 0), while being a decreasing
y function for any tensile strain (ε 0) studied. We discuss the consequences of spatial variations of
a both the binding energy and the diffusion barrier of an adatom caused by the strain field around a
M heteroepitaxial island. For a simplified geometry, we evaluate the speed of growth of two coherently
strained islands on the GaAs(001) surface and identify a growth regime where island sizes tend to
1 equalize during growth due to the strain dependence of surface diffusion.
2
]
i
c
s- I. INTRODUCTION eroepitaxial islands, the islands themselves are under
l compressive strain, whereas the substrate beneath the
r
t In recent years, the heteroepitaxial growth of lattice- island is expanded. As a consequence of this expansion,
m mismatched semiconductor systems has at
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