Effect of the InPlane Magnetic Field on Conduction of the Siinversion Layer Magnetic Fiel.pdf

Effect of the In-Plane Magnetic Field on Conduction of the Si-inversion Layer: Magnetic Field Driven Disorder a b b b V. M. Pudalov G. Brunthaler , A. Prinz , G. Bauer a P. N. Lebedev Physics Institute, 117924 Moscow, Russia. b Institut f¨ur Halbleiterphysik, Johannes Kepler Universt¨at, Linz, Austria 1 We compare the effects of temperature, disorder and parallel magnetic field on the strength of the 0 metallic-like temperature dependence of the resistivity. We found a similarity between the effects of 0 disorder and parallel field: the parallel field weakens the metallic-like conduction in high mobility 2 samples and make it similar to that for low-mobility samples. We found a smooth continuous effect y of the in-plane field on conduction, without any threshold. While conduction remains non-activated, a the parallel magnetic field restores the same resistivity value as the high temperature does. This M matching sets substantial constraints on the choice of the theoretical models developed to explain the mechanism of the metallic conduction and parallel field magnetoresistance in 2D carrier systems. 3 We demonstrate that the data for magneto- and temperature dependence of the resistivity of Si- MOS samples in parallel field may be well described by a simple mechanism of the magnetic field ] dependent disorder. l e r-