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Anisotropy of Resonant Inelastic XRay Scattering at the K Edge of SiTheoretical Analysis.pdf

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Anisotropy of Resonant Inelastic XRay Scattering at the K Edge of SiTheoretical Analysis

Typeset with jpsj2.cls ver.1.2 Full Paper Anisotropy of Resonant Inelastic X-Ray Scattering at the K Edge of Si: Theoretical Analysis 6 0 1 ∗ 1 2 0 Yunori Nisikawa , Manabu Usuda and Jun-ichi Igarashi 2 r 1 p Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute, Mikazuki, Sayo, A Hyogo 679-5148 8 2Faculty of Science, Ibaraki University, Mito, Ibaraki 310-8512 1 (Received February 2, 2008) ] i c We investigate theoretically the resonant inelastic x-ray scattering (RIXS) at the K edge of s l- Si on the basis of an ab initio calculation. We calculate the RIXS spectra with systematically r t varying transfered-momenta, incident-photon energy and incident-photon polarization. We m. conﬁrm the anisotropy of the experimental spectra by Y. Ma et al. (Phys. Rev. Lett. 74, 478 t a (1995)), providing a quantitative explanation of the spectra. m - KEYWORDS: resonant inelastic X-ray scattering, K edge of Si d n o c [ 1. Introduction 4 Inelastic x-ray scattering is a promising method to study electronic structures in matters. v 9 It is advantageous to use a resonant enhancement by tuning photon energy near absorption 0 0 edge. Recently it has been revealed that the resonant inelastic x-ray scattering (RIXS) is 5 0 a powerful tool for elucidating the electronic properties of solids. RIXS measurement has 4 been applied to search for charge