a_Si∶H薄膜及MWECR_CVD制备技术.pdfVIP

前沿进展 a - Si ∶H 薄膜及 MWECR - CVD 制备技术 阴生毅 　　陈光华 (北京工业大学材料科学与工程学院　北京 　100022) 摘 　要 　　文章回顾了 a - Si ∶H 薄膜的发展历程 ,并介绍了其近 10 年的研究状况. 为提高 a - Si ∶H 薄膜的沉积速 ( ) 度 ,还重点介绍了一种新的微波电子回旋共振等离子体 CVD MWECR - CVD 技术. 该技术的特点是 :不含电极 ,可 避免电极溅射造成的污染 ;等离子区离子密度高 ,对硅烷能高度分解 ,从而可显著提高薄膜生长速率 ;改变磁场位 形和结构 ,可改变等离子体分布及轰击基片离子的能量. 文章还分析了其制备 a - Si ∶H 薄膜存在的问题 ,提出了今 后的研究方向. 关键词 　　a - Si ∶H 薄膜 ,等离子体增强 CVD ,微波电子回旋共振等离子体 CVD Preparation of a - Si ∶H films by MWECR - CVD YIN ShengYi 　　CHEN GuangHua ( ) College of Materials Science and Engineering , Beijing University of Technology , Beijing 　100022, China Abstract 　　Recent developments over the past decade in the preparation of a - Si ∶H films are reviewed , with em phasis on a new means to increase the deposition rate by microwave electron cyclotron resonancechemical vapor deposition ( MWECR CVD ) . This method does not involve electrodes so that contamination due to sputtering of the electrodes is negligible , the high plasma density can decompose silane effectively so a higher deposi tion rate can be obtained , and by changing the magnetic field configuration the plasma distribution and energy of the ions bombarding the substrates can be easily changed. Current problems and future research directions are discussed. Key words 　　a - Si ∶H films , plasma enhanced CVD , MWECRCVD 旋共振 CVD , 由于离子能量可控 、沉积速度高和薄 1 　引言