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Effect of Bias Step on the IV Curve in DoubleBarrier
CHIN.PHYS.LETT Vo1.23,No.4(2006)960
EffectofBiasSteponthe —VCurveinDouble-BarrierA1GaAs/GaAs/AlGaAs
Resonant—TunnellingDevices
DAIZhen—Hong(戴振宏)2十 NIJun(倪军)
DepartmentofPhysicsandKeyLaboratoryofAtomicandMolecularNanoscience,TsinghuaUniversity
Beijing100084
DepartmentofPhysics,YantaiUniversity,Yantai264005
(Received8November2005)
Weinvestigatethenon—equilibriumelectrontransportpropertiesofdouble—barrierAICaAs/GaAs/A1GaAsresonant—
tunnellingdevicesinnonlinearbiasusingthetime—dependentsimulationtechnique.Itisfoundthatthebiasstep
oftheexternaJbiasvoltageappliedonthedevicehasanimportanteffectonthe6halcurrent—voltagef一
curves.Theresultsshow thatdifferentbiasstepappliedon thedevicecanchanget血ebistablety,hysteresisand
currentDlateaustructureoftheI— V CUrVe.Thecurrentplateauoccursonly inthecaseofsmallbiasstpe .As
thebiasstep increases,thisplateaustructuredisappears.
PACS:7340.Gk,7321.Fg,73.23一b,73.50,-h
W iththedevelopmentofthemolecularbeam epi— InthisLetter,usingthetime.dependentnumerical
taxyfMBE1technique,thedouble—barrierresonant simulationtechnique,westudytheelectrontransport
tunnellingnanodeviceshavebeenextensivelystudied propertyofanAlGaAs/GaAs/AlGaAsdouble—barrier
—N目_】\《。0_[一 ∞∞ 1【0
duetotheirpotentialdeviceapplicationsinvariousas— devicewhoseenergyband—profileisshownintheinset
pects.Therehavebeenmanyimportantexperimental ofFig.1.W efind thatapartfrom theeffectofthe
discoveriesinthiskindofconfinedsystems.【一 Now, deviceitself,thebiasstepappliedonthedeviceplays
mostoftheexperimentalstudiesfoCUSon the elec— animporta
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