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Effects of heat dissipation on unipolar resistance switching in PtNiOPt capacitors
Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt
capacitors
*
S. H. Chang, S. C. Chae, S. B. Lee, C. Liu, and T. W. Noh
ReCOE FPRD, Department of Physics and Astronomy, Seoul National University, Seoul
151-747, Korea
J. S. Lee and B. Kahng
Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
J. H. Jang and M. Y. Kim
School of Materials Science and Engineering, Seoul National University, Seoul 151-744,
Korea
D.-W. Kim
Department of Applied Physics, Hanyang University, Ansan, Gyeonggi 426-791, Korea
C. U. Jung
Department of Physics, Hankuk University of Foreign Studies, Yongin, Gyeonggi 449-791,
Korea
We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode
thicknesses, tBE, and investigated their resistance switching behaviors. The capacitors with
tBE ≥ 50 nm exhibited typical unipolar resistance memory switching, while those with
tBE ≤30 nm showed threshold switching. This interesting phenomenon can be explained in
terms of the temperature-dependent stability of conducting filaments. In particular, the
thinner tBE makes dissipation of Joule heat less efficient, so the filaments will be at a higher
temperature and become less stable. This study demonstrates the importance of heat
dissipation in resistance random access memory.
*
Corresponding Author. E-mail: twnoh@snu.ac.kr
Resistance switching phenomena, observed in numerous materials,1,2 have regained a
great deal of attention recently due to their potential application in nonvolatile memory
devices called resistance random access memory (RRAM).3–9 Achieving good scalabil
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