基于相位偏移干涉术的薄膜厚度测量方法.pdfVIP

30 1 Vol. 30 No. 1 2009 1 Jour al of Applied Optics Ja . 2009 : 1002-2082(2009) 01-0076-04 石 一磊, 苏俊宏, 杨利红, 徐均琪 ( , 710032) 摘　要: 为解决薄膜厚度的高精度测量问题, 提出一 基于相位偏移干涉术的薄膜厚度测量新方 法, 利用该方法对一个实际SiO2 薄膜样片进行测试, 通过对所获取的干涉图进行相位解包及数据 分析处理, 实现对薄膜样片厚度的精确测试。结果表明: 该方法具有非接触和测量精度高等优点, 所测薄膜厚度的峰谷值为0. 162m, 均方根值为0. 043m, 为薄膜工艺的进一步研究提供了检测 方法上的技术保障。 关键词: 相位偏移干涉法; 干涉图; 薄膜; 薄膜厚度测量 : TN247: A - - Measuring thin film thickness with phase shift interferometry SHI Yi-lei, SU Ju -ho g, YANG Li-ho g, XU Ju -qi ( , , 710032, ) School of Optoelectro ics E gi eeri g Xi a Tech ological U iversity Xi a Chi a : - - Abstract High precisio measureme t of thi film is a preco ditio for the process optimizatio a d diag ositcs i the thi -film preparatio . I terferometric metrology is a w idely accepted high- preciso measureme t tech ology w hich takes w avele gth as the measureme t u it. A ovel measureme t method of thi -film thick ess based o phase-shift i terferometry is prese ted. 2 - T he precisio measureme t for the thick ess of SiO thi film sample w as realized after the phase u w rappi g a d data processi g for the obtai ed i terferogram w ere impleme ted. T he results show that this method has the adva tages of o co tact a d high accuracy , a d the PV - 0. 162 0. 043 . a d RM S values of the measured thi film thick ess are m a d m respectively : - ; ; - ;