《Characterization of Doped Amorphous Silicon Thin Films》.pdf

Int. J. Mol. Sci. 2011, 12, 2200-2215; doi:10.3390/ijm OPEN ACCESS International Journal of Molecular Sciences ISSN 1422-0067 /journal/ijms Article Characterization of Doped Amorphous Silicon Thin Films through the Investigation of Dopant Elements by Glow Discharge Spectrometry. A Correlation of Conductivity and Bandgap Energy Measurements Pascal Sánchez 1,2,†, Olaya Lorenzo 3,†, Armando Menéndez 2,*, Jose Luis Menéndez 3, David Gomez 2, Rosario Pereiro 1 and Beatriz Fernández 1,* 1 Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Julian Clavería, 8 33006 Oviedo, Spain; E-Mails: pascal@itma.es (P.S.); mrpereiro@uniovi.es (R.P.) 2 Energy Group (EN)-ITMA Foundation, Calafates 11 (L.3.4) 33417 Avilés, Spain; E-Mail: d.gomez@itma.es 3 Department of Nanostructured Materials, Nanomaterials and Nanotechnology Research Center (CINN), Government of Asturias, Spanish Council for Scientific Research (CSIC), University of Oviedo (UO), Technology Park of Asturias, 33428 Llanera, Asturias, Spain; E-Mails: olayalc@ (O.L.); jl.menendez@cinn.es (J.L.M.) † These authors contributed equally to this work. * Authors to whom correspondence should be addressed; E-Mails: a.menendez@itma.es (A.M.); fernandezbeatriz@uniovi.es (B.F.); Tel.: +34-985-105365; Fax: +34-985-103125. Received: 4 February 2011; in revisedform: 15 March 2011 / Accepted: 28 March 2011 / Published: 30 March 2011 Abstract: The determination of optical parameters, such as absorption and