《Electromigration_behavior_in_Cu-(Sn-8Zn-3Bi)-Cu_solder_joint》.pdf

Microelectronics Reliability 50 (2010) 251–257 Contents lists available at ScienceDirect Microelectronics Reliability journal homepage: www.elsevi /locate/microrel Electromigration behavior in Cu/Sn–8Zn–3Bi/Cu solder joint Lijuan Liu, Wei Zhou, Hongbo Zhang, Baoling Li, Ping Wu * Department of Applied Physics, Faculty of Science, Tianjin University, Tianjin 300072, PR China Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Tianjin 300072, PR China Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, PR China a r t i c l e i n f o a b s t r a c t Article history: Electromigration behavior in a one-dimensional Cu/Sn–8Zn–3Bi/Cu solder joint structure was investi- Received 21 April 2009 gated in ambient with a current density of 3.5 104 A/cm2 at 60 C. Due to the compressive stress Received in revised form 13 September 2009 induced by volume expansion resulting from Cu–Zn intermetallic compound (IMC) growth, Cu5Zn8 Available online 22 October 2009 IMC layers were squeezed out continuously along IMC/Cu interfaces at both the anode and the cathode with increasing the current stressing time, which was not only driven by the concentration gradient, but also accelerated by the electromigration. And a few voids propagated and formed at the anode and the cathode solder/IMC interfac