《2016_12_JKPS_V63_PL2057-L2061_JP130456》.pdf

Journal of the Korean Physical Society, Vol. 63, No. 11, December 2013, pp. L2057∼L2061 Letters Formation of CuInGaSe2 Thin Film Photovoltaic Absorber by Using Rapid Thermal Sintering of Binary Nanoparticle Precursors Chung Ping Liu,∗ Ming Wei Chang and Chuan Lung Chuang Department of Photonics Engineering, Yuan Ze University, 135, Yuan Tung Road, Chungli, Taiwan 320, Republic of China (Received 29 July 2013, in final form 22 August 2013) It was known that properties of copper-indium-gallium-diselenide (CIGS) thin films were evidently affected by precursor nanoparticle-ink and sintering technology. The nanoparticles were fabricated by using a rotary ball-milling (RBM) technique. After RBM, the particle size of the agglomerated CIGS powder was smaller than 100 nm. The nanoparticle ink was printed onto a Mo/soda lime glass substrate and baked at a low temperature to remove solvents and to form a dry precursor. Crystallographic, morphological, and stoichiometric properties of films were then obtained by using the precursor CIGS samples sintered at various heating rates in a non-vacuum environment without selenization. Analytical results revealed that the 2-theta data of the sample sintered at a heating rate of 15 ◦C/s were the closest to the data on the JCPDS card for Cu(Ga0.3In0.7 )Se2.0 because their ◦ ◦ ◦ angles were 26.8 , 44.5 , and 52.7 , respectively. In addition, analytical results indicated that the