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《8.门极参数Rge、Cge和Lg对IGBT开关波形的影响》.pdf
Driving Parameters Effects
OctOct. 2010. 2010
Power Seminar
Driving parameters
Gate driving voltage
Driver driving capability (peak output current)
Gate resistor (Rge)
Gate capacitor (Cge)
Gate loop inductance (Lg)Gate loop inductance (Lg)
=
Ideal resistive driver
Vs. real application driver
Copyright © Infineon Technologies 2010. All rights reserved.
Gate voltage level
Tvj=125°°C
°°
Positive voltage
Effect to VcesatEffect to Vcesat
Effect to VcesatEffect to Vcesat
VgeVge,Vcesat,Vcesat
VgeVge,,VcesatVcesat
note:note:max. allowed Vge is max. allowed Vge is
notenote::max. allowed Vge is max. allowed Vge is
Tvj=125°°C
±±20V20V °°
±±20V20V
Effect to short cicuitEffect to short cicuit
Effect to short cicuitEffect to short cicuit
VgeVge,Isc,Isc (tsc(tsc))
VgeVge,,IscIsc ((tsctsc))
Copyright © Infineon Technologies 2010. All rights reserved.
Gate voltage level
Negative voltage
¬ To guarantee safety off
state, avoid parasitic
miller turn on
¬¬ Turn on delay increase Turn on delay increase
(dead time)
¬ Slightly reduce tf and
Miller capa
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