《Growth of ultrathin Ti films deposited on SnO2 by magnetron sputtering》.pdf

Thin Solid Films 437 (2003) 57–62 Growth of ultrathin Ti films deposited on SnO2 by magnetron sputtering a a, a ` b b a T. Godfroid , R. Gouttebaron *, J.P. Dauchot , Ph. Leclere , R. Lazzaroni , M. Hecq a ´ ˆ Laboratoire de Chimie Inorganique et Analytique, Universite de Mons-Hainaut, Parc Initialis, Batiment Materia Nova, avenue Nicolas Copernic, 7000 Mons, Belgium b ´ ´ ˆ Service de Chimie des Materiaux Nouveaux, Universite de Mons-Hainaut, Parc Initialis, Batiment Materia Nova, avenue Nicolas Copernic, 7000 Mons, Belgium Received 7 October 2002; received in revised form 21 March 2003; accepted 10 April 2003 Abstract Low-e multilayers, such as dielectricyAgydielectricyglass, are systems extensively used in the field of architectural glass for thermal insulation. However, the physical and chemical phenomena that occur at interfaces are still not fully understood, in particular the function of the sacrificial layer deposited between the dielectric and the silver layers. Most of the time, the sacrificial layer is made of a very thin film of titanium. In order to understand the growth modes of Ti film on SnO2 substrate, as well as the chemical mechanisms taking place at the interface, we have studied by X-ray photoelectron spectroscopy (XPS) the growth of