《Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects》.pdf

下载文档 降价啦

2
0
约 6页
2015-11-12 发布于河南
举报
版权申诉
保障服务

《Modeling of cylindrical surrounding gate MOSFETs including the fringing field effects》.pdf

1、本文档共6页，可阅读全部内容。
2、有哪些信誉好的足球投注网站（book118）网站文档一经付费（服务费），不意味着购买了该文档的版权，仅供个人/单位学习、研究之用，不得用于商业用途，未经授权，严禁复制、发行、汇编、翻译或者网络传播等，侵权必究。
3、本站所有内容均由合作方或网友上传，本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺！文档内容仅供研究参考，付费前请自行鉴别。如您付费，意味着您自己接受本站规则且自行承担风险，本站不退款、不进行额外附加服务；查看《如何避免下载的几个坑》。如果您已付费下载过本站文档，您可以点击这里二次下载。
4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等，请点击“版权申诉”（推荐），也可以打举报电话：400-050-0827(电话支持时间：9:00-18:30)。

Vo1．34，No．7 JournaIofSemiconductors July2013 M odelingofcylindricalsurroundinggateM OSFETsincludingthefringlng fieldeffects SantoshK．Gupta1,十andSrimantaBaishya2 1DepartmentofElectronics CommunicationEngineering MotilalNehruNationalInstituteofTechnologyAllahabad，Uttar ， Pradesh一211004，India 2DepartmentofElectronics CommunicationEngineeringNationalInstituteofTechnologySilchar,Assam 一788010，India ． Abstract：A physicallybasedanalyticalmodelforsurfacepotentialandthresholdvoltageincludingtherfinging gatecapacitancesincylindricalsurroundgate(CSG)M0SFETshasbeendeveloped．Basedonthisasubthresh— olddraincurrentmodelhasalsobeenderived．Thismodelfirstcomputesthechargeinducedinthedrain／source regionduetotherfingingcapacitancesandconsidersaneffectivechargedistributioninthecylindricallyextended source／drainregionforthedevelopmentofasimpleandcompactmode1．Therfinginggatecapacitancestakeninto accountareouterrfingecapacitance，innerrfingecapacitance，overlapcapacitance，andsidewal1capacitance．The mode1hasbeenverifiedwiththedataextractedrfom 3D TCAD simulationsofCSGMOSFETsandwasfoundto beworkingsatisfactorily． Keywords：physicsbasedmodeling；source／drainextension(SDE)；cylindricalsurroundinggate(CSG)MOS- FETs；rfingingfield；surfacepotential；thresholdvoltage DOI：10．1088／1674—4926／34／7／074001 PACC：7340Q；7360L andthethresholdvoltagebasedontheparasiticcapacitance 1．Intr0ductiOn