《output n-MOSFETs》.pdf

Chin．Phys．B Vo1．23，No．9 (2014)090702 Utilizingashallow trenchisolationparasitictransistorto characterizethetotalionizingdoseeffectofpartially—depleted SslillliCcoonn-．on-insulaattoorrinpuutt／／OoUuttDpuuttnn一．MMOSFETs个木 Pengcha0(彭超)?，HuZhi—Yuan(胡志远)引，Nin、gBing．xu(宁冰旭)，HuangHui．Xiang(黄辉祥)， FanShuang(樊 双)，ZhangZheng—Xuan(张正选))十，BiDa．Wei(毕大炜)，andEnYun．Fei(恩云飞)) a)stareKeyLaboratoryofFuncfionaiMaterialsforInformatics ShanghaiInstitute0fMjcm 据m and工nf0肿 ation丁echnoj0昌 ， ChineseAcademyofSciences，Shanghai 200050，China b)ScienceandTechnologyonReliabilityPhysicsandApplicationTechnologyofElectronicComponenfLab0rato Guangzh0u510610 China ， (Received1IMarch2014；revisedmanuscriptreceived25Mrach2014；publishedonline16July2014) weinvestigatetheeffectsof。Co rayirradiationonthel30nm pattially—depleted silicon．on—isolator(PDS0I) input／output(i／o)n—MOSFETs．A shallowrtenchisolation(STI)parasitictransistorisresponsiblefortheobservedhump intheback—gatetransferchraacteristiccurve．TheSTIpraasitictransistor,inwhichthertenchoxideactsasthegateoxide． issensitivetotheradiation，anditintroducesanewwaytocharacterizethetotalionizingdose(TID)responsesintheSTI oxide．A radiationenhanceddraininducedbarrierlower(DIBL)effectisobservedintheSTIpraasitictransistor．Itis manifestedasthedrainbiasdependenceoftheradiation—inducedoff-state1eaka