《Oxygen Induced Limitation on Grain Growth in RF Sputtered Indium Tin Oxide Thin Films》.pdf

JournalofEnergyandPowerEngineering8(2014)1232-1236 OxygenInducedLim itationonGrainGrowthinRF Spu ered-I■ndI●‘Um ■●I_I●nOxideThinFiImS BuddhiSagarLamsal，YungHuh，MukulDubey，ManojKC andQiHuaFan ． DepartmentofElectricalEngineeringandComputerScience，SouthDakotaStateUniversity,BrookingsSD57007,USA 2DepartmentofPhysics，SouthDakotaStateUniversiyt,BrookingsSD57007,USA Received：February23，2014／Accepted：April02，2014／Published：July31，2014 Abstract：ITO(indiumtinoxide1thinfilmsweredepositedontoglasssubstratesbyRF(radiofrequency)magnetronsputteringto studyvariationofgraingrowthinpureragonand99％ ragonplus1％ oxygenatdifferentsubstratetemperatures．Theaveragegrainsize increasedwiththeincreasing substratetemperatureinpureargon．However,inoxygenpresenceenvironmentthegram growthis limitedatabove150。C．Thefilmsoptoelectronicpropertieswereevaluated．Itwasfoundthat200nm ITO filmsprepraedat220。C substratetemperatureinpureargonpossessedoptimum sheetresistanceof10g2／sq．Thetrna smittanceoflTO filmswasenhancedwith increasingthesubstratetemperatureinpureragonbutlimitedbythepresenceofexcessoxygen． Keywords：Sputtering，thinfilm，graingrowt h 1．IntrOductiOn oxygen concentration are ofthe mostcriticalin determiningthequalityandsizeofgrains，crystallinity ITO fIndium tinoxide)thinfilmsareextensively [11]， carrier concentration [12] and optical usedastransparentandconductingelectrodesinsolar characteristics[13]．Mnaystudieshavebeencarried cells，displaydevices，sensors，andautomobiles[1，2】． out on grain growth in presence of substrate These films are highly degenerate n-type temperature and oxygen flow during ITO film semiconductorsnadpo