《Precise Control of Temperature Rising Speed of Wafer during Rapid Thermal Processing》.pdf

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《Precise Control of Temperature Rising Speed of Wafer during Rapid Thermal Processing》.pdf

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JournalofMechanicsEngineeringandAutomation4(2014)359-364 … … PreciseControlofTemperatureRisingSpeedofW afer duringRapidThermalProcessing ShigekiHirasawa，TsuyoshiKawanami，KatsuakiShirai，TetsuyaUrimoto，NaokiMorimoto，AtsushiFujiwara andSadanoriToda DepartmentofMechanicalEngineering,KobeUniversity,Kobe657-8501，Japan Received：March14，2014 ／Accepted：April03，2014／Published：May25，2014 Abstract：Inrapidthermalprocessingofasemiconductorwafer．itisimpo~anttokeepflgiventemperaturerisingspeedofthewafer duringthetemperaturerisingprocess．W emadeallexperimentalapparatustomeasurethetemperaturerisingspeedofaceramicballof 2mm indiameterheatedwithfourhalogenlampheaters．Theheatingrateofthehalogenlampheaterswascontrolledbycomputerto keepagiventemperaturerisingspeedof50。C／swithacontrollingtimeintervalof0．1s．Weexaminedtheeffectofvariousheating controlmethodsontheerrorofthetemperaturerisingspeedoftheceramicbal1．Wefoundthatflcombinedmethodofcontrolwith preparedcorrelationandPID (proportionalintegralderivative)controlisagoodmethodtodecreasetheerrorofthetemperaturerising speed．Theaverageerrorofthetemperaturerisingspeedis0．5。C／s．andtherepetitionerrorisalmostzeroforthetemperaturerising speedof50。C／sfrom 330 。C to370。C．W ealsomeasuredtheeffectsofartificialcontroldelaytimeandmeasuringerrorofthe monitoringtemperatureontheerrorofthetemperaturerisingspeed． Keywords：Electronicequipmentmanufacturing，rapidheating，heattreatment，temperaturecontrol，PID control 1．IntrOducti0n ctor heater In the heating process of manufacturing semiconductors，siliconwafersareheatedto 1，000。C todiffuseimpurityatoms(arsenic，etc．)intothesilicon substrateandtooxidizeit．Schematicviewsofat