《Simulating and modeling the breakdown voltage in a semi-insulating GaAs P＋N junction diode》.pdf

Vo1．35，No．8 JournalofSemiconductors AUClust2014 Simulatingandmodelingthebreakdownvoltagein a semi-insulatingGaAsP+N junctiondiode A．ResfatBrahimi．R．Menezla，andM ．Benchhima ， LaboratoryofModelingandConceptionoftheCircuitsElectronic，DepartmentofElectronics，UniversityDjillaliLiabbs，BP89 SidiBelAbbes22000，Algeria Abstract：ThisworkaimstodeterminethecharacteristicI(breakdownvoltage)oftheinversecurrentinaGaAs PNiunctiondiode，subjecttoareversepolarization，whilespecifyingtheparametersthatinfluencethebreakdown voltageofthediode．Inthiswork wesimulatedthebehavioroftheionizationphenomenonbyimpactbreakdown byavalancheofthePNiunctions，subjecttoaninversepolarization． Welwilltakeintoaccountboththetrappingmode1inastationaryregimeintheP十N structureusinglikematerial ofbasistheIII—V compoundsandmainlytheGaAssemi—insulating inwhichthedeepcentershaveinimportant densities．Wearetalkingaboutthemodeloftrappinginthespacechargeregion(SCR)andthatisthetrapdensity donorandacceptorstates． Thecarriercrossingthespacechargeregion(SCR)ofW thicknesscreatesN electron-holepairs：forevery createdpair,theelectronandtheholearesweptquicklybytheelectricfield，eachinanoppositedirection，which comesback，accordingtoanalreadyacceptedreasoning，tothecrossingofthespacechargeregion(scR)byan electronorahole．SotheevenN paircreatedbytheinitia1particleprovokeN2ionizationsandsoforth． Thestudyofthephysicalandelectricalbehaviourofsemiconductorsisbasedontheinfluenceofthepresenceof deepcentersonthecharacteristicJ(1current—tension，whichrequiresthecalculationoftheelectrostaticpotential， theelectricfield，theintegralofionization，theden