Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N implanted CVT grown ZnSe single crystals》.pdf

Materials Science in Semiconductor Processing 36 (2015) 140–148 Contents lists available at ScienceDirect Materials Science in Semiconductor Processing journal homepage: /locate/mssp Effect of swift heavy ion (SHI) irradiation on the structural and optical properties of N implanted CVT grown ZnSe single crystals P. Kannappan a, K. Baskar a, J.B.M. Krishna b, K. Asokan c, C.L. Dong d, C.L. Chen d, Y.R. Lu d, R. Dhanasekaran a,n a Crystal Growth Centre, Anna University, Chennai 600 025, India b UGC-DAE Consortium for Scientific Research, III-/LB-8, Bidhan Nagar, Kolkata 700 098, India c Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India d National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan a r t i c l e i n f o a b s t r a c t Available online 11 April 2015 Present study reports the variation of structural and optical properties of N implanted Keywords: ZnSe single crystals grown by a Chemical Vapor Transport (CVT) technique due to120 MeV ZnSe Au ion irradiation. The grazing incidence X-ray diffraction (GIXRD) results show that the Ion irradiation full width at half maximum (FWHM) increases on irradiation. The surface morphology of GIXRD irradiated sample shows the pits and islands by AFM studies. The optical absorption cut AFM off wavelength is 493 nm for as grown ZnSe whereas for the implanted and irradiated Photoluminescence samples cut off wavelength shift towards red region. The photoluminescence spectrum XANES