Line Edge Roughness of Directed Self Assembly PS-PMMA Block.pdf

Line Edge Roughness of Directed Self Assembly PS-PMMA Block Copolymers –A Possible Candidate for Future Lithography 1 2 1 1 Chengqing Wang , Gila Stein , Gus Bosse , Wen-li Wu 1 Polymers Division, NIST, Gaithersburg, MD 2 Dept. Chem. Biomol. Eng., Univ. Houston, Houston, TX BCP DSA for CMOS Relevant Structures Courtesy of P. F. Nealey Research Group, Wisconsin OBJECTIVES • ITRS calls for a LER of ~1.3 nm at 3s beyond 22 nm • LER on DSA samples has only been measured with surface probes including AFM, SEM; the results are much worst than what is called for E-beam resist pattern LER = (3.5 ± 0.3) nm @3σ DSA pattern LER= (6.0 ± 0.6) nm @3σ Critical Dimension Small Angle Scattering Nanostructure shape metrology with X-rays -1 qx (Relative to Diffraction Axis) (nm ) 0.0 0.1 0.2 0.3 0.4 0.5 20