(Ce，Yb）共掺杂氧化硅薄膜的发光特性及其结构.pdfVIP

第44卷第9期 红外与激光工程 2015年9 月 Vol.44No.9 InfraredandLaserEngineering Sep.2015 非制冷红外焦平面读出电路用带隙基准电压源 赵公元，赵毅强 (天津大学 电子信息工程学院 专用集成电路设计中心，天津 300072) 摘 要院提出了一种高精度、低功耗、小面积的电流型CMOS基准电压源以满足非制冷红外焦平面 (IRFPA)读出电路对基准电压源模块的要求。设计中采用两种分别具有正负一阶温度系数的电阻，通 过对基准电压源的高阶温度系数进行补偿，获得更好的温度系数TC（Temperature Coefficient）。通过 使用共源共栅结构代替传统的运放，节约了传统运放和偏置电路的功耗，并且具有出色的电源电压 抑制比PSRR(Power Supply Reject Ratio)。该设计使用标准0.18滋m CMOS 工艺实现，工作电压3.3V, -40~120益温度范围内，输出基准电压温度系数约为3.7ppm/益，PSRR 约为-78dB@1kHz，在25益 时消耗电流6.3滋A，消耗芯片面积仅230滋m伊100滋m，所提出的电路是一种低功耗、节约面积的设 计。 关键词院红外焦平面； 带隙基准电压源； 高阶曲率补偿； 低功耗； 常数电流 中图分类号院TN43 文献标志码院A 文章编号院1007-2276(2015)09-2627-06 Bandgap voltage reference for IRFPA readout integrated circuit Zhao Gongyuan, Zhao Yiqiang (ASIC Design Center, School of Electronic and Information Engineering, Tianjin University袁Tianjin 300072, China) Abstract: A novel high precision, low power and area economic current mode complementary metal- oxide鄄semiconductor (CMOS) bandgap voltage reference used in uncooled infrared focal plane array (IRFPA) systems was presented in this work. The proposed BGR contained two type of resistors with the opposite temperature coefficients(TCs), which could compensate the BGR忆s high order curvature error and obtain better TC. This paper illustrated a cascaded structure without a traditional op鄄amp, achieving low power consumption as well as excellentpower supplyreject ratio(PSRR).This circuit was implemented in a standard 0.18滋m CMOS process. The simulation results have confirmed that the proposed BGR operates with a supply voltage of 3.3V, consuming 6.3滋A at room temperature, and the output voltage reference temperature coefficient is about 3