超声雾化法制备Er3%2b掺杂SnO2薄膜结构和性质研究.pdf

—————————————丝塑L Abstract Tin an dioxide(Sn02)is n—typesemiconductorwithawideband toits gap．Due nlgfl and conductivity in good the transparencyvisible spec咖m，whichhasbeen used wldeJYfor transparent conducting sensorands01ar electrodes，gas cells．In recent and years，moremore researchers have to its began new study photoelectric 1s propenies，it usedasafunctional extensively materialfor optoelectronicdevices． E ESpeciallydoping3+，thetransitionof is 1．549m it veryimportant，since tothe correspondsminimumfiber quartz absorption ofa wavelength，being very useful materialin opticalcommunication． thin Er-dopedSn02films were depositedultrasonic by atomization method．nle IntluenceofEr concentrations doping and