09材料三余剑剑.doc

毕业设计（论文） （ 2012届 ） 题 目 硅片清洗原理与改进方法硅片清洗原理与改进方法 Abstract Along with the development of large scale integrated circuit, the constant improvement of the level of integration, the line width of constantly decrease, the quality requirements of the silicon wafer of more and more is also high, especially in silicon PaoGuangPian surface quality requirements more and more severe. In silicon transistors and integrated circuit production, almost every process is the problem of silicon cleaning, the stand or fall of silicon cleaning device performance to have a serious impact, processes improper, may make all silicon scrap, cant make the tube to, or made the inferior device performance, stability and reliability is poor. So clear of the silicon cleaning method and principle, whether it be for wafer processing in person, still engaged in the production of semiconductor devices for people is of great significance. In this paper, the basic theory of silicon cleaning process method and common techniques are discussed in detail, at the same time for some commonly used cleaning solution for shallow, and the importance of silicon cleaning and development prospects were simply discusses. At last, the paper introduces the latest progress of the cleaning process. Keywords： 目 录 摘 要 I Abstract II 第1章 硅片清洗的基本理论 1 1.1 硅面的表面状态与洁净度问题 1 1.2 吸附理论 2 1.3硅片表面玷污杂质的来源和分类...................................3 1.4硅片清洗的一般程序.............................................3 第二章 硅片清洗的常用方法与技术 4 2.1 湿法化学清洗 4 2.1.1常用化学试剂洗液的性质.....................................4 2.1.2溶液浸泡法.................................................5 2.1.3机械擦洗法.................................................5 2.1.4超声波清洗技术.............................................5 2.1.5兆声波清洗技术.............................................6 2.1.6旋转喷淋法.................................................6 2.2干法清洗技术...................................................7 2.2.1等离子体清洗技术........................................