《无机材料学报》写作及排版规范..doc

文章编号: DOI: Al/SnO2/FTO结构双极性电阻开关的制备及其性质研究 赵 飞1,2，徐智谋1,2，武兴会1,2,刘斌昺1，徐海峰1，张学明1 （1.华中科技大学 光学与电子信息学院，武汉 430074；2.武汉光电国家实验室（筹），武汉 430074) 摘 要: 本文通过溶胶凝胶的方法，在FTO衬底上制备得到SnO2薄膜，并对SnO2薄膜的晶体结构以及荧光光谱（PL）进行了研究.XRD结果显示SnO2薄膜为多晶结构，PL结果表明SnO2薄膜存在氧空位以及氧填隙等缺陷.通过直流磁控溅射在SnO2薄膜上面溅射Al作为顶电极，并对Al/SnO2/FTO结构进行了电阻开关性质研究，测试结果表明器件具有双极性电阻开关性质和良好的阻态保持特性. 对器件的电流-电压曲线特征进行了研究，认为SnO2薄膜内氧离子（氧空位）在电场作用下发生迁移，在Al/SnO2界面发生氧化还原反应是引起Al/SnO2/FTO结构双极性电阻开关行为的原因. 关 键 词: SnO2薄膜；电阻开关；双极性；溶胶–凝胶法 中图分类号: TN303、TN389 文献标识码: A Preparation and Characterization of Al/SnO2/FTO Bipolar Resistive Switching Fei zhao1,2, Zhimou xu1,2, Xinghui wu1,2, Binbing liu1, Haifeng xu1, Xueming zhang1, (1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074, China; 2. Wuhan National Laboratory for Optoelectronics, Wuhan, 430074, China) Abstract: In this article, SnO2 thin film was achieved on the FTO substrate through sol-gel method. Then the crystal structure and photoluminescence of the SnO2 films were analyzed. The XRD data showed that the SnO2 film was polycrystalline, and the PL spectrum indicated that there existed oxygen vacancies and the interstitial oxygen defect in the SnO2 film. The Al top electrode was fabricated by DC magnetron sputtering on the SnO2 film. We also conducted a research on the switching properties of the Al/SnO2/FTO structure, and the results illustrated that the device has bipolar resistive switching property and good state retention characteristic. We concluded that the oxygen ions (oxygen vacancies) migrated under appropriate bias voltage, and the redox reaction occurred in the Al/SnO2 interface was the main reason that caused the bipolar resistive switching, within the I-V curves study of the device. Key words: SnO2 thin films; resistive switching; bipolar; Sol-Gel method 电阻开关现象是指电介质在电流或电压作用下突然改变其电阻值，并且这种改变具有可逆性和非易失性. 由于电阻开关在非易失性存储器中的潜在的应用价值，而引起研究人员的广泛关注和研究兴趣. 在电阻开关研究中，阻变材料的研究一直是人们研究的重点. 经过近几十年的研究，电阻开关现象在多种材料中被发现. 这些材料主要集中在过