用185nmUV水中总有机碳..docVIP

用185nmUV降低水中总有机碳(TOC)的研究 邓守权1 闻瑞梅2 (1英顺达科技有限公司 上海 201114；2同济大学上海 200092) H2O2，证实了185nmUV照射水时，可以产生活性中间体·OH等。185nmUV应用到高纯水制备系统中的新工艺，能有效地将高纯水中的TOC降低到很低水平(≤0.3μg/L)，满足超大规模集成电路用水的需要。同时185nmUV对废水中有机物的TOC也有较好降解作用，是一种降解水中难生物降解的有毒有害的有机污染物的新方法，有利于丰富高级氧化技术的研究以及环境保护。 [关键词] 185nmUV 总有机碳 双氧水 高纯水 废水 [中文图书分类号] [文献标识号] [文章编号] The Abatement of TOC in Aqueous Solutions by 185nmUV Rays Deng Shouquan1, Wen Ruimei2 (1Inventec (Shanghai) Co., Ltd., Shanghai 201114, China; 2 School of Electronic Information, Tongji University, Shanghai 20092, China) Abstract: Some mechanism of photo-gradation of organic matters in aqueous solutions by 185nmUV rays is investigated in this paper. The dissociation of water molecules into ·OH and other active intermediates is the primary step of photo-gradation of organic matters. H2O2 is detected in this experiment, which in turn confirms this primary step of photo-gradation of organic matters. This new method of 185nmUV rays is applied to the process of preparation of ultra-pure water and TOC in products is just only 0.3μg/L, which solves successfully the key technical problem for Ultra Large Scale Integrated Circuits (ULSI). Meanwhile 185nmUV rays are also good to abate TOC in wastewater, and a novel method to degrade non-biodegradable, noxious and deleterious organic matters in aqueous solutions and to expand theoretically some theory of Advanced Oxidation Processes (AOP). All these investigations are favorable for protecting environment. Keywords: 185nmUV; TOC (Total Organic Carbon); H2O2; Ultra-pure Water; Wastewater 水中有各种杂质，如果总有机碳TOC)含量高，TOC中碳残留物会影响光刻胶的覆盖造成针孔缺陷引起离子注入时的内部结深变化。含碳的有机物污染可使硅片局部氧化速度加，使氧化层不均匀。碳化物残留在硅片上，造成新的颗粒性的污染，破坏了器件的完整性。高纯水的质量是影响超大规模集成电路(ULSI)成品率的重要因素[1]光刻线条1986年已提出将1M DRAM用高纯水的TOC 20μg/L [2]。若为256Mbit位电路则TOC要求0.5μgL [3]。目前大规模集成电路已达1G(1×109)位, 光刻线条宽为0.13μm., 对水质的要求越来越高。ULSI用水中对TOC浓度提出了严格的要求。现在已有许多的技术和设备能将高纯水做得很好，用一般的纯水制备工艺和设备是不能达到TOC浓度2μg/L或更低。而本文用185nmUV技术可将TOC浓度降低到0.3μg/L左右，满足超大规模集成电路用高纯水的需求。 同时，研究185nmUV对废水中有