2光子吸収法を用いた-kochi.pdf

15 3 1.1 1.2 2.1 2.1.1 2.1.2 2.2 2.3 2 2.4 2.5 Micro Stereolithography) (Rapid ProtoTyping) (Rapid Manufacturing) (Numerical Apeture) 3.1 3.1.1 3.1.2 3.1.3 3.1.4 3.1.5 3.1.6 3.1.7 XY ,Z 3.2 3.2.1 3.2.2 3.2.3 3.2.4 3.2.5 3.2.6 3.2.7 CAD ( XY Z ) 1 1 2 2 3 3 5 7 12 13 13 15 16 17 18 18 19 20 21 22 22 24 25 27 27 28 29 30 43 1.1 1.2 2 2 5 24 2 1 3 2 2 -1- 2.1 , Micro Stereolithography) 3D CAD , 2.1.1 RP ) RP(Rapid Prototyping) RM(Rapid Manufacturing) Rapid Prototyping Rapid Prototyping 3 CAD RP ( RP RP PR RP -2- 2.1.2 RM Rapid Manufacturing RP RM RP (Rapid Manufacturing Fig.2.1 5μm RM 360μm× 20μm 2.2 1 2 1 Fig.2.1 2 μm -3- 1 2 () Fig.2.2 1 Fig.2.3 2 -4- 2.3 2 2 ) (Two-Photon Absorption : TPA) 2 ( 2 22 Fig.2.4 2 Fig.2.4 2 21 2 Fig.2.5 -5- Spectra-Physics Tsunami Millennia Vs Nikon :100×NA=1.3 E = E0 cos(ωt + kx) ω = 2πf = 2π c λ P = AE + BE 2 P BE 2 (2.2) (2.1) P = AE0 cosωt + BE02 cos2 ωt (2.3) P = AE0 cosωt + BE0 2 2 (1 ? cos 2ωt) = BE0 2 2 + AE0 cosωt ? BE0 2 2 cos 2ωt 3 E (2.1) (2.2) (2.3) (2.4) (2.5) -6- 2.4 (NA) 2.4.1 (Numerical Aperture) Numerical Aperture(NA) f /d Fig.2. NA NA NA = n sinθ ∝ n d 2f Z f-number F . (2.6) Fig.2.6 n( ) n1 NA (2.6) NA 1 -7- Fig.2.7 NA 1.3(Plan Flour Nikon :100) NA Fig.2.8 NA Z -8- NA 2.4.2 (diffraction limited) ε = Kλ NA0 λ NAC NA0 NAC NA0 NA0 ε λ 710nm NA0 = 1.3 ε = 0.61× 710 ×10?9 ≈ 0.33×10?6 [m] 1.3 330nm K 0.61 (2.7) K Rayleigh limit, quarter-wave criteria (2.8) 2 2 (Ith) 2 Threshold (Ith) Fig.2.9,10 -9- Fig.2.9 1 Fig.2.10 1 - 10 - Fig.2.11 2 Fig.2.12 2 - 11 - 2.5 Fig.2.13 2.14 2 XY SEM 190nm 2 Fig.2.13 ( 710nm, 5mW, SEM 42μm/s) Fig.2.14 (Fig.2.13) - 12 - 3 3.1 3.1.1 ( 710 nm 130 fs 80 MHz) (Spatial Filter) (Neutral Density Filter:ND) 1 :GM) 2 (f 300,f 400) (100× NA=1.3) Fig.3.1.1,2 ND ( 1.3 Fig.3.1.1 Fig.3.1.2 - 13 - Millennia Vs) Ti:Sapphir 3 (Spectra-Physics Tsunami 2 3 Fig.3.1.3 Ti:Sapphir Fig.3.1.4 Fig.3.1.5 ND - 14 - 3.1.2 XY XY Fig.3.1.6 Fig.3.1.7 - 15 - 3.1.3 () NC Fig.3.1.8 () Fig.3.1.9 () Fig.3.1.10 Fig.3.1.10 - 16 -