化學抛光技术在晶体材料中的应用研究毕业设计稿.docVIP

化学抛光技术在晶体材料中的应用研究 摘 要 化学抛光是目前唯一能获得全局平面化效果的平整化技术H2SO4、H2O21∶1的溶液为化学抛光液，抛光1小时，此工艺为石榴石晶片合适的化学抛光工艺。抛光后晶片表面在10×10μm2范围内平均粗糙度达到0.3536nm，与传统商用硅片抛光后效果相当。此抛光工艺的获得，解决了石榴石晶体在应用于高能激光器时由于表面粗糙影响输出功率的问题。 关键词 化学抛光；Yb:YAG晶体；原子力显微镜；平均粗糙度 Study on chemical polishing of crystals material Abstract Chemical polishing is the only technology to achieve the overall plane currently. In this paper, chemical polishing of the garnet crystal is studied. Comparing the effect of different chemical polishing solution on polishing the sample, the sample polishing at room temperature and high temperature, different polishing time on the samples polished. Using atomic force microscopy and other equipment to test the surface morphology of the samples polished. After comparison and analysis, we know that at room temperature, using solution of H2SO4、H2O2 volume ratio of 1∶1 as a chemical polishing solution and polishing one hour, are suitable chemical polishing technology of garnet wafer. The surface average roughness of the garnet wafer polished reached 0.3536nm in the range of 10 × 10μm2, almost the same roughness as the silicon wafer polished which is used in traditional industry. As we know, surface roughness of the garnet crystal used in high-energy laser affects the output power. The polishing technology we talked about solves the problem. Keywords chemical polishing; Yb:YAG crystal ; AFM; the average roughness 目 录 1 绪论 1 1.1 化学抛光的应用背景 1 1.2 几种常见的化学机械抛光工艺 3 1.3 应用化学抛光技术的实例 4 1.4 石榴石基质特性及典型石榴石晶体Yb:YAG晶体 5 2 实验方法 7 2.1 晶体生长及加工 7 2.2 化学抛光 9 2.3 显微镜原理 9 2.4 原子力显微镜原理 10 3 抛光工艺探索 11 3.1 化学抛光液对抛光质量的影响 11 3.2 温度对抛光质量的影响 12 4 实验 13 4.1 实验流程概述 13 4.2 晶体表面的原子力显微镜分析（1） 14 4.3 晶体表面的原子力显微镜分析（2） 18 4.4 实验小结 22 结 论 24 致 谢 25 参 考 文 献 26 附录A 译文 27 附录B 外文原文 33 1 绪论 1.1 化学抛光的应用背景 现代短波光学、强光光学、电子学及薄膜科学等学科的发展对所需材料的表面质量的要求越来越高,尤其是强激光技术对光学元件表面粗糙度的要求极为苛刻,要求达到超光滑表面的标准[1]。而传统的加工工艺不可避免地给晶体元件带来诸多的表面缺陷。再者,新材料在各种元器件中具有广泛的应用，为了获得电子元件的高性能,制造大规模集成电路的硅片、水晶振子基片、铌酸锂基片、钽酸锂基片等晶体基片不仅要求有极高的平面度和无损伤超光