ccd芯片的静电防护设计 毕业设计 .doc

CCD芯片的静电防护设计 CCD芯片TCD1208AP由半导体工艺制成，所以存在着静电防护的问题，静电是造成产品失效的首要因素。本论文对CCD芯片TCD1208AP片上人体模型的静电防护做了一些研究，以消除人体模型的静电对其的破坏。 本论文着重从理论上解决了OD与SS之间传统侦测电路的一个共同的缺点：热插播事件和ESD(静电泄放)的快速瞬变都会使NMOS管导通。在完成各个管脚的ESD保护电路的版图设计时，主要介绍了自己的布局布线技巧。另外研究了ESD保护电路对CCD高频时钟脉冲信号输入时所产生的RC延时，首先建立ESD保护电路的理想等效电路，建立CCD芯片加载ESD保护电路后产生RC延时的数学模型，然后用数学软件MATLAB计算出了ESD保护电路对高频信号所产生的RC延时,根据设计要求这个延时不能超过20纳秒。 关键词 ： CCD芯片静电防护设计 I/O延时数学模型的建立 The Electrostatic Protection Design of The CCD Chip ABSTRACT：CCD chip TCD1208AP is made by the semiconductor technology, therefore electrostatic protection problem exists on this chip. Static electricity is the primary cause of failure of the product, This paper studies HBM Electrostatic protection design on the CCD chip TCD1208AP, some design has been carried out to eliminate the static electricity damage to the CCD chip TCD1208AP. This paper primarily solves the problem of traditional detection circuits between the OD and SS in a theory level: the power-on and the fast transient of ESD(Electro-Static discharge ) will both turn the NMOS on. In addition this paper also carries out the layout design of the ESD protection circuit for each pin, and introduces the layout design skills. We also focuses on studying the delay of ESD protection circuit under CCD high-frequency signals input. Firstly, we completed the establishment of equivalent circuit . then establishing the mathematical model of the RC delay when the CCD chip ESD protection is loaded on it . lastly, calculating the RC delay by using mathematical software MATLAB. According to the design requirements, this delay can not be more than 20 ns. Key Words: CCD chip electrostatic protection design the establishment of the mathematical model of I/O delay 目录 第1章 绪言........................................................1 1.1 研究背景及意义.............................................1 1.2 国内外的研究现状...........................................1 1.3 本论文研究的问题............................