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F59L1G81MA(2Y)
ESMT F59L1G81MA (2Y)
Elite Semiconductor Memory Technology Inc. Publication Date: Jul. 2014
Revision: 1.1 1/44
Flash 1 Gbit (128M x 8)
3.3V NAND Flash Memory
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V)
Organization
- Memory Cell Array: (128M + 4M) x 8bit
- Data Register: (2K + 64) x 8bit
Automatic Program and Erase
- Page Program: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
Page Read Operation
- Page Size: (2K + 64) Byte
- Random Read: 25us (Max.)
- Serial Access: 25ns (Min.) (3.3V)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time
- Program time: 300us - typical
- Block Erase time: 3ms - typical
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating Gate Technology
- ECC Requirement: - 4bit/512Byte,
- Endurance: 100K Program/Erase cycles
- Data Retention: 10 years
Command Register Operation
Automatic Page 0 Read at Power-Up Option
- Boot from NAND support
- Automatic Memory Download
NOP: 4 cycles
Cache Program Operation for High Performance Program
Cache Read Operation
Copy-Back Operation
EDO mode
OTP Operation
Bad-Block-Protect
ORDERING INFORMATION
Product ID Speed Package Comments
F59L1G81MA -25TG2Y 25 ns 48 pin TSOPI Pb-free
F59L1G81MA -25BG2Y 25 ns 63 ball BGA Pb-free
F59L1G81MA -25BCG2Y 25 ns 67 ball BGA Pb-free
GENERAL DESCRIPTION
The device is a 128Mx8bit with spare 4Mx8bit capacity. The
device is offered in 3.3V Vcc Power Supply. Its NAND cell
provides the most cost-effective solution for the solid state mass
storage market. The memory is divided into blocks that can be
erased independently so it is possible to preserve valid data
while old data is erased.
The device contains 1024 blocks, composed by 64 pages
consisting in two NAND structures of 32 series connected Flash
cells. A program op
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