Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003.pdf

Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003.pdf

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Lin InGaN GaN light emitting diodes with Ni Au, Ni ITO Solid state electronics 47 849 2003

InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts Y.C. Lin a, S.J. Chang a,*, Y.K. Su a, T.Y. Tsai a, C.S. Chang a, S.C. Shei b, C.W. Kuo c, S.C. Chen d a Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, No. 1 Ta Hseuh Road, Tainan 70101, Taiwan b South Epitaxy Corporation, Hsin-Shi 744, Taiwan c Department of Electrical Engineering, Kun-Shan University of Technology, Yung-Kang 710, Taiwan d Department of Electronic Engineering, National Yunlin University of Science and Technology, Touliu 640, Taiwan Received 1 September 2002; received in revised form 5 October 2002; accepted 14 October 2002 Abstract The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni(3.5 nm)/ITO(60 nm) and Ni(5 nm)/Au(5 nm) films were studied. It was found that the normalized transmittance of ITO and Ni/ITO films could reach 98.2% and 86.6% at 470 nm, which was much larger than that of the Ni/Au film. It was also found that both Ni/ITO and Ni/Au could form good ohmic contact on top of p-GaN. In contrast, ITO on p-GaN was electrically poor and non-ohmic. Nitride-based light-emitting diodes (LEDs) with these three p-contact layers were also fabricated. It was found that the LED forward voltage was 3.65, 3.26 and 3.24 V for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respec- tively. With a 20 mA current injection, it was also found that measured output power was 7.50, 6.59 and 5.26 mW for the LEDs with ITO, Ni/ITO and Ni/Au p-contact layer, respectively. Although the LED with ITO p-contact could provide the largest output intensity, its lifetime was the shortest due to severe heating effect.  2002 Elsevier Science Ltd. All rights reserved. Keywords: ITO; Ni/ITO; LED; InGaN/GaN; EL 1. Introduction Group III nitride semiconductors have recently at- tracted much attentions for their versatile applications as high-brightness light emitting diodes (LEDs) which can be used in full-color displays,

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