MMD70R900P_Pre Datasheet_R00_20130215.pdf

MMD70R900P PreDatasheet Feb. 2013 Revision 0.0 MagnaChip Semiconductor Ltd. 1 Parameter Value Unit VDS @ Tj,max 750 V RDS(on),max 0.9 ? VTH,typ 3 V ID 5 A Qg,typ 15 nC Order Code Temp. Range Package Packing RoHS Status MMD70R900PRH -55 ~ 150℃ TO-252 (DPAK) Reel Halogen Free MMD70R900P 700V 0.9? N-channel MOSFET ? Description MMD70R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. ? Features ? Low Power Loss by High Speed Switching and Low On-Resistance ? 100% Avalanche Tested ? Green Package – Pb Free Plating, Halogen Free ? Key Parameters ? Ordering Information ? Applications ? PFC Power Supply Stages ? Switching Applications ? Adapter ? Motor Control ? DC – DC Converters D G S G D S ? Package Internal Circuit MMD70R900P PreDatasheet Feb. 2013 Revision 0.0 MagnaChip Semiconductor Ltd. 2 Parameter Symbol Rating Unit Note Drain – Source voltage VDSS 700 V Gate – Source voltage VGSS ±30 V Continuous drain current ID 5 A TC=25℃ 3 A TC=100℃ Pulsed drain current(1) IDM 15 A Power dissipation PD 40 W Single - pulse avalanche energy EAS 50 mJ MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature Tstg -55 ~150 ℃ Maximum operating junction temperature Tj 150 ℃ 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS Parameter Symbol Value Unit Thermal resistance, junction-case max Rthjc 3.1 ℃/W Thermal resistance, junct