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Pressure-induced electronic topological transitions in low dimensional superconductors
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EHPRG Award Lecture
Pressure-induced electronic topological transitions
in low dimensional superconductors
G. G. N. Angilella
Dipartimento di Fisica e Astronomia, Universita? di Catania,
and Istituto Nazionale per la Fisica della Materia, UdR Catania,
64, Via S. Sofia, I-95123 Catania, Italy
E-mail: Giuseppe.Angilella@ct.infn.it
Abstract. The high-Tc cuprate superconductors are characterized by a quasi-
two-dimensional layered structure where most of the physics relevant for high-Tc
superconductivity is believed to take place. In such compounds, the unusual
dependence of critical temperature Tc on external pressure results from the
combination of the nonmonotonic dependence of Tc on hole doping or hole-doping
distribution among inequivalent layers, and from an “intrinsic” contribution.
After reviewing our work on the interplay among Tc, hole content, and pressure in
the bilayered and multilayered cuprate superconductors, we will discuss how the
proximity to an electronic topological transition (ETT) may give a microscopic
justification of the “intrinsic” pressure dependence of Tc in the cuprates. An
ETT takes place when some external agent, such as doping, hydrostatic pressure,
or anisotropic strain, modifies the topology of the Fermi surface of an electronic
system. As a function of the critical parameter z, measuring the distance of the
chemical potential from the ETT, we recover a nonmonotonic behaviour of the
superconducting gap at T = 0, regardless of the pairing symmetry of the order
parameter. This is in agreement with the trend observed for Tc as a function
of pressure and other material specific quantities in several high-Tc cuprates and
other low dimensional superconductors. In the case of epitaxially strained cuprate
thin films, we argue that an ETT can be driven by a strain-induced modification of
the in-plane band structure, at constant hole co
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