SQ4946EY-T1-E3;中文规格书,Datasheet资料.pdf

Document Number: 74492 S-81560-Rev. C, 23-Oct-08 1 Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET SQ4946EY Vishay Siliconix FEATURES ? TrenchFET? Power MOSFET ? Package with Low Thermal Resistance AEC-Q101 RELIABILITY ? Passed all AEC-Q101 Reliability Testing ? Characterization Ongoing Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1 square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.055 ID (A) 4.5 Configuration Dual N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Available Pb-free RoHS* COMPLIANT ORDERING INFORMATION Package SO-8 Lead (Pb)-free SQ4946EY-T1-E3 SnPb SQ4946EY-T1 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C ID 4.5 A TC = 70 °C 3.8 Continuous Source Current (Diode Conduction)a IS 2 Pulsed Drain Currentb IDM 30 Single Pulse Avalanche Energy L = 0.1 mH EAS 7.2 mJ Single Pulse Avalanche Current IAS 12 A Maximum Power Dissipationb TC = 25 °C PD 2.4 W TA = 70 °C 1.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA 62.5 °C/W Junction-to-Case (Drain) RthJC - / Document Number: 74492 2 S-81560-Rev. C, 23-Oct-08 SQ4946EY Vishay Siliconix Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended period