SQ9945AEY-T1-E3;中文规格书,Datasheet资料.pdf

Document Number: 74499 S-81559-Rev. B, 23-Oct-08 1 Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET SQ9945AEY Vishay Siliconix FEATURES ? TrenchFET? Power MOSFET ? Package with Low Thermal Resistance AEC-Q101 RELIABILITY ? Passed all AEC-Q101 Reliability Testing ? Characterization Ongoing Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1 square PCB (FR-4 material). PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) at VGS = 10 V 0.080 ID (A) ± 3.7 Configuration Dual N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 S 1 D 1 G 1 D 1 S 2 D 2 G 2 D 2 SO-8 5 6 7 8 T op V iew 2 3 4 1 Available Pb-free RoHS* COMPLIANT ORDERING INFORMATION Package SO-8 Lead (Pb)-free SQ9945AEY-T1-E3 SnPb SQ9945AEY-T1 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C ID - 3.7 A TC = 70 °C - 3.2 Continuous Source Current (Diode Conduction)a IS 2 Pulsed Drain Currentb IDM 25 Single Pulse Avalanche Energy L = 0.1 mH EAS - mJ Single Pulse Avalanche Current IAS - A Maximum Power Dissipationb TC = 25 °C PD 2.4 W TA = 70 °C 1.7 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mountc RthJA - °C/W Junction-to-Case (Drain) RthJC - * Pb containing terminations are not RoHS compliant, exemptions may apply / Document Number: 74499 2 S-81559-Rev. B, 23-Oct-08 SQ9945AEY Vishay Siliconix Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of