SXA-389Z;SXA-389;中文规格书,Datasheet资料.pdf

Features 1 of 10 Optimum Technology Matching? Applied GaAs HBT InGaP HBT GaAs MESFET SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MICRO DEVICES?, RFMD?, Optimum Technology Matching?, Enabling Wireless Connectivity?, PowerStar?, POLARIS? TOTAL RADIO? and UltimateBlue? are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ?2006, RF Micro Devices, Inc. Product Description 7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@. InP HBT LDMOS RF MEMS SXA-389(Z) 400MHz to 2500MHz ?W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipo- lar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications. 0 5 10 15 20 25 30 35 40 45 50 850 MHz 1960 MHz 2140 MHz 2450 MHz OIP3 P1dB Gain Typical IP3, P1dB, Gain dB m Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number) On-Chip Active Bias Control, Sin- gle 5V Supply High Output 3rd Order Intercept:+42to+44dBm Typ. High P1dB :+25dBm Typ. High Gain:+19dB at 850MHz High Efficiency: Consumes Only 600mW Patented High Reliability GaAs HBT Technology Surface-Mountable Power Plastic Package Applications W-CDMA, PCS, Cellular Systems High Linearity IF Amplifiers Multi-Carrier Applications EDS-102231 Rev F Package: SOT-89 SXA-389(Z) 400MHz to 2500MHz ?W Medium Power GaAs HBT Amplifier with Active Bias Parameter Specification Unit Co