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Absence of long-range NiMn ordering in ferromagnetic La2NiMnO6 thin films
1
Absence of long-range Ni/Mn ordering in ferromagnetic
La2NiMnO6 thin films
M.P. Singh, C. Grygiel, W.C. Sheets, Ph. Boullay, M. Hervieu,
W. Prellier,* B. Mercey, Ch. Simon, and B. Raveau
Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN,
6 Bld. Maréchal Juin, F-14050 Caen, France
(Dated: 07 June 2007)
Epitaxial La2NiMnO6 thin films have been grown on (001)-orientated SrTiO3 using the
pulsed laser deposition technique. The thin films samples are semiconducting and ferromagnetic
with a Curie temperature close to 270 K, a coercive field of 920 Oe, and a saturation
magnetization of 5 μB per formula unit. Transmission electron microscopy, conducted at room
temperature, reveals a majority phase having “I-centered” structure with a ≈ c ≈ asub 2 and b ≈
2asub along with minority phase domains having a “P-type” structure (asub being the lattice
parameter of the cubic perovskite structure). A discussion on the absence of Ni/Mn long-range
ordering, in light of recent literature on the ordered double-perovskite La2NiMnO6 is presented.
2
The double perovskite La2NiMnO6, a magnetic semiconductor, has received considerable
attention recently because the material demonstrates ferromagnetic order near room temperature
with a Curie temperature (TC) of 280 K.[1,2] The development of magnetic semiconductors
exhibiting near room temperature ferromagnetism offers potential applications in next-generation
spintronic devices, such as spin-based transistors and advanced magnetic memory storage
elements. Moreover, large magnetic-field-induced changes in the resistivity and dielectric
properties have been reported for single-phase samples of La2NiMnO6.[3] Materials that respond
to multiple external stimuli, such as switching the dielectric constant with an applied magnetic
field (magneto-dielectric effect), would enable novel device applications.
Samples of La2NiMnO6 have been studied extensively for their structural and physical
properties. Disagreement exists
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