APT25GP90BDQ1G;中文规格书,Datasheet资料.pdf

05 0- 74 76 R ev A 1 1- 20 05 APT25GP90BDQ1(G)TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 350μA) Gate Threshold Voltage (VCE = VGE, IC = 1mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 25A, Tj = 125°C) Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 900V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES Units Volts μA nA Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL APT25GP90BDQ1(G) 900 ±30 72 36 110 110A @ 900V 417 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. APT Website - CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 900 3 4.5 6 3.2 3.9 2.7 350 1000 ±100 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ? C E G The POWER MOS 7? IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? Low Conduction Loss ? SSOA Rated ? Low Gate Charge ? Ultrafast Tail Current shutoff POWER MOS 7? IGBT TO-247 G C E / 05 0- 74 76 R ev A 1 1- 20 05 APT25GP90BDQ1(G) 1 Repetitive Rating: Pulse