EM6K7T2R;中文规格书,Datasheet资料.pdf

1/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.07 - Rev.A 1.2V Drive Nch+Nch MOSFET EM6K7 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET Applications Switching Features 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for portable equipment. Inner circuit Packaging specifications T2R 8000 EM6K7 Type Package Code Basic ordering unit (pieces) Taping Absolute maximum ratings (Ta=25°C) It is the same ratings for the Tr1 and Tr2 Parameter V V mA mW / TOTAL °C mA °C VDSS VGSS PD Tch ID IDP Tstg Symbol 20 ±8 ±200 ±400 150 mW / ELEMENT120 150 ?55 to +150 Limits Unit ?1 Pw≤10μs, Duty cycle≤1% ?2 Each terminal mounted on a recommended land. Drain?source voltage Gate?source voltage Drain current Total power dissipation Channel temperature Range of storage temperature Continuous Pulsed ?1 ?2 Thermal resistance Parameter °C/W / TOTAL Rth(ch-a) Symbol Limits Unit Channel to ambient 833 °C/W / ELEMENT1042 ? Each terminal mounted on a recommended land ? Abbreviated symbol : K07 EMT6 Each lead has same dimensions (1) ?1 ?1 (1)Tr1 Source (2)Tr1 Gate (3)Tr2 Drain (4)Tr2 Source (5)Tr2 Gate (6)Tr1 Drain (2) (3) (4)(5)(6) ?2?2 ?1 Esd Protection diode ?2 Body Diode / 2/4 ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.07 - Rev.A Data Sheet EM6K7 Electrical characteristics (Ta=25°C) It is the same characteristics for the Tr1 and Tr2 Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) Ciss |Yfs| Coss Crss Min. ? 20 ? 0.3 ? ? 200 ? ? ? ? ? ? 0.8 25 ? 10 10 ±10 ? 1 1.0 1.2 ? 1.0 1.4 ? ? ? ? ? μA VGS=±8V, VDS=0V ID=1mA, VGS=0V VDS=20V, VGS=0V VDS=10V, ID=1mA ID=200mA, VGS=2.5V ID=200mA, VGS=1.8V VDS=10V VDS=10V, ID=200mA VGS=0V f=1MHz V μA V ? ? ? 1.2 1.6 2.4 4.8 ID=40mA, VGS=1.5V ID=20mA, VGS=1.2V ? ? pF mS pF pF td(on) ? 5 ? VDD 10V, ID=150mA ns t