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EMH2T2R;UMH2NTN;中文规格书,Datasheet资料
Datasheet
? 2012 ROHM Co., Ltd. All rights reserved.
EMH2 / UMH2N / IMH2A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 47kW.
2) Two DTC144E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing lInner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
R1 47kW
R2 47kW
Parameter Tr1 and Tr2
VCC 50V
IC(MAX.) 100mA
Part No. Package
Package
size
(mm)
Taping
code
8,000 H28
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMH2 EMT6 1616 T2R 180
3,000 H2
IMH2A 3,000 H2
UMH2N UMT6 2021 TR 180 8
SMT6 2928 T108 180 8
EMT6 UMT6
SMT6
EMH2
(SC-107C)
IMH2A
SOT-457 (SC-74)
UMH2N
SOT-353 (SC-88)
OUT
(6)
(2)
IN
(1)
GND
(3)
OUT
IN
(5)
GND
(4)
OUT
(4)
(2)
IN
(3)
GND
(1)
OUT
IN
(5)
GND
(6)
EMH2 / UMH2N IMH2A
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/7 2012.06 - Rev.C
/
? 2012 ROHM Co., Ltd. All rights reserved.
Data SheetEMH2 / UMH2N / IMH2A
lAbsolute maximum ratings (Ta = 25°C)
For Tr1 and Tr2 in common
Supply voltage
Input voltage
Output current
Collector current
Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
For Tr1 and Tr2 in common
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be excee
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